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At the recent IEEE International Solid State Circuits Conference, Samsung shared some details of its own 3nm GAE MBCFET chip manufacturing.

According to the latest report released by DigiTimes, TSMC’s 3nm process will begin trial production in the second half of this year. In recent years, the competition between Samsung and TSMC in advanced technology processes has become increasingly fierce. Although Samsung has been lagging behind TSMC, it is constantly catching up.

It is reported that in terms of 3nm process, TSMC still insists on using FinFET technology, but Samsung has chosen to transition to nanochip transistors.

According to Taejoong Song, vice president of Samsung Electronics at the meeting, the nano-chip structured transistor will be a successful design because this technology can provide "high speed, low power consumption and small area."

In fact, as early as 2019, Samsung first announced the 3nm process and made it clear that it would abandon FinFET. Samsung divides its 3nm process into 3GAE and 3GAP. At the meeting, Samsung said that the 3GAE process node will achieve up to 30% performance improvement, while power consumption can be reduced by 50%, and transistor density can also be increased by 80%.

Because it lags behind TSMC at the 7nm and 5nm process nodes, Samsung has high hopes for the 3nm process and hopes to use nanochip transistors to overtake TSMC.

It is reported that Samsung's 3GAE process is expected to be officially launched in 2022, and the many details displayed at the meeting also indicate that Samsung has taken another step forward in the 3nm process.

Judging from the timing of the launch of Samsung's 3GAE process, Samsung and TSMC will undoubtedly have a more intense competition for advanced 3nm processes in 2022.